Dehradun: A team of Researchers from IIT Roorkee has yet again made a major breakthrough in memory device technology developing a high-intensity memory device- MeRAM using the magnetron sputtering technique.
Department of Physics and Centre for Nanotechnology’s researcher’s team has developed a high-density, energy-efficient and four-logic state memory device at the Functional Nanomaterials Research Laboratory which is can be used for all computing process and memory-intensive tasks like video and multimedia signal processing, pattern recognition, virtual reality, artificial intelligence and machine learning.
Davinder Kaur Walia, Department of Physics and Centre for Nanotechnology Professor said, “MeRAM has immense potential to be used in future memory chips for almost all electronic applications, including smartphones, tablets, computers, microprocessors, and for large data storage.”
She said, “The world is rapidly moving towards faster, smaller and quantum technologies which has created an ever-increasing demand for small and more efficient devices and technology. Our focus was to achieve a four-logic state as we knew that then we will be able to create a device which could probably usher in a new technological revolution.”
“To achieve this, we used a new material called Ferromagnetic Shape Memory Alloys (FSMA) and the concept of the composite barrier were chosen which helps us in achieving the goal of distinguishable memory logic states. The current ultimate memory cell has shown a tremendous improvement of nearly 140 percent in the memory functions,” she added.
IIT Roorkee develops MeRAM, breakthrough in memory devices
